MANHASSET, NY -- Cree, Inc. has signed a nonexclusive worldwide license agreement with RFHIC Corp. that provides access to Cree's pioneering Doherty amplifier-related patents.
"From our early work in maximizing the efficiency of silicon LDMOS amplifiers to our current initiatives using GaN-based devices, Cree has successfully developed innovative circuits that enhance the performance of the classic Doherty architecture," said Jim Milligan, Cree, director of RF, in a statement.
Cree's RF innovation and Doherty architecture can serve as the foundation for advanced 4G base stations that are substantially more efficient than conventional designs, according to the company.
The Doherty amplifier is a fundamental RF amplifier architecture that uses two parallel, equal power split transistors, a carrier amplifier transistor for low level signals and a peaking amplifier transistor for high level signals. Increased demand for higher-efficiency systems using digital modulation formats, such as those in 3G W-CDMA networks are suitable for online applications including video chat and streaming video in upcoming 4G LTE systems.
Conventional silicon LDMOS or GaAs transistors meet the efficiency and linearity requirements of upcoming 4G LTE base stations, and related wireless systems, that use high peak-to-average ratio signal modulation. Using Cree's high-frequency, high-power GaN HEMTs and the latest generation digital pre-distortion systems, the resulting efficiency improvements can be 15 percentage points greater than that achieved by a conventional Doherty amplifier implemented with silicon LDMOS, according to Cree.
The nonexclusive license agreement with RFHIC (Suwon, South Korea) is intended to enhance the telecommunications infrastructure. Cree's Doherty amplifier circuit patent license program is one of several.
Cree licenses Doherty amplifier IP for 4G LTE
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